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Absolute Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
40
±20
Units
V
V
I D
E AS
P D
Drain Current Continuous (V GS = 10V)
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25 o C
(Note 1)
(Note 2)
70
Figure 4
102
92
0.6
A
mJ
W
W/ o C
T J , T STG
Operating and Storage Temperature
-55 to +175
o
C
Thermal Characteristics
R θ JC
Thermal Resistance, Junction to Case
1.63
o C/W
R θ JA
Thermal Resistance, Junction to Ambient TO-263,
area
1in 2
copper pad
43
o C/W
Package Marking and Ordering Information
Device Marking
FDB8445
Device
FDB8445
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
40
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 32V
V GS = 0V
V GS = ±20V
T J =150°C
-
-
-
-
-
-
1
250
±100
μ A
μ A
nA
On Characteristics
V GS(th)
r DS( on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V DS = V GS , I D = 250 μ A
I D = 70A, V GS = 10V
I D = 70A, V GS = 10V,
T J = 175°C
2
-
-
2.5
6.8
13
4
9
17.2
V
m ?
Dynamic Characteristics
C iss
C oss
C rss
R G
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
f = 1MHz
V GS = 0 to 10V
-
-
-
-
-
2860
295
180
1.95
44
3805
395
270
-
62
pF
pF
pF
W
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain Charge
V GS = 0 to 2V
V DS = 20V,
I D = 70A,
-
-
-
-
2.9
11
8.2
11
4.1
-
-
-
nC
nC
nC
nC
FDB8445 Re v A 1 (W)
2
www.fairchildsemi.com
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